TRANSIENT ISOTHERMAL GENERATION AT SILICON-SILICON OXIDE INTERFACE AND DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION

被引：12

作者：

SIMMONS, JG ^{[1
]}

MAR, HA ^{[1
]}

机构：

[1] UNIV TORONTO, ELECT ENGN DEPT, TORONTO M5S 1A7, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 05期

关键词：

D O I：

10.1016/0038-1101(76)90072-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 374

页数：6

共 50 条

[1] A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE
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