TRANSIENT ISOTHERMAL GENERATION AT SILICON-SILICON OXIDE INTERFACE AND DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION

被引：12
|
作者：
SIMMONS, JG [1 ]
MAR, HA [1 ]
机构：
[1] UNIV TORONTO, ELECT ENGN DEPT, TORONTO M5S 1A7, ONTARIO, CANADA
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 05期
关键词：
D O I：
10.1016/0038-1101(76)90072-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：369 / 374
页数：6
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