TUNNELING SPECTROSCOPY IN MS AND MIS TUNNEL-JUNCTIONS OF DEGENERATE N-TYPE SEMICONDUCTOR

被引：9

作者：

NISHIZAWA, J ^{[1
]}

KIMURA, M ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 10期

关键词：

D O I：

10.1143/JJAP.14.1529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1529 / 1538

页数：10

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