TUNNELING SPECTROSCOPY IN MS AND MIS TUNNEL-JUNCTIONS OF DEGENERATE N-TYPE SEMICONDUCTOR

被引：9
|
作者：
NISHIZAWA, J [1 ]
KIMURA, M [1 ]
机构：
[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 10期
关键词：
D O I：
10.1143/JJAP.14.1529
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1529 / 1538
页数：10
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