CONCENTRATION PROFILING FOR HIGH-VOLTAGE P+-N-N+ DIODES

被引：4
|
作者：
SUNDERSINGH, VP
GHATOL, AA
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 01期
关键词：
D O I：
10.1080/00207218308938701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：127 / 137
页数：11
相关论文
共 50 条
  • [41] Current-Voltage Characteristics of High-Voltage 4H-SiC p+-n0-n+ Diodes in the Avalanche Breakdown Mode
    Ivanov, P. A.
    Potapov, A. S.
    Samsonova, T. P.
    Grekhov, I. V.
    SEMICONDUCTORS, 2017, 51 (03) : 374 - 378
  • [42] PARTIAL BREAKDOWN IN P+-N-N+ STRUCTURES
    PAVLINOV, AB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 925 - 926
  • [43] SMALL-SIGNAL IMPEDANCE OF GOLD-DOPED P+-N-N+ SILICON DIODES
    PETERS, DW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 828 - &
  • [44] PLANAR TERMINATION FOR HIGH-VOLTAGE P-N-JUNCTIONS
    GEORGESCU, S
    DUNCA, T
    SDRULLA, D
    GHITA, I
    SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1035 - 1039
  • [45] COMPUTER STUDY OF A HIGH-VOLTAGE P-PI-N--N+ DIODES AND COMPARISON WITH A FIELD-LIMITING RING STRUCTURE - COMMENTS
    NAVON, DH
    HWANG, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1834 - 1834
  • [46] VOLTAGE INTERCEPT OF P+-N-N+ STRUCTURES WITH VARIABLE-GAP N-TYPE BASES
    ASHKINAZI, GA
    ZOLOTAREVSKII, LY
    RABKIN, PB
    KHAMELIS, YS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 172 - 175
  • [47] Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction
    V. P. Paderov
    D. S. Silkin
    Yu. V. Goryachkin
    A. A. Khapugin
    A. V. Grishanin
    Journal of Communications Technology and Electronics, 2017, 62 : 616 - 620
  • [48] Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode
    P. A. Ivanov
    A. S. Potapov
    T. P. Samsonova
    I. V. Grekhov
    Semiconductors, 2017, 51 : 374 - 378
  • [49] High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates
    Wang, Jingshan
    McCarthy, Robert
    Youtsey, Chris
    Reddy, Rekha
    Xie, Jinqiao
    Beam, Edward
    Guido, Louis
    Cao, Lina
    Fay, Patrick
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (11) : 1716 - 1719
  • [50] Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring
    Kyuregyan, AS
    SEMICONDUCTORS, 2000, 34 (07) : 835 - 843
12345