VOLTAGE INTERCEPT OF P+-N-N+ STRUCTURES WITH VARIABLE-GAP N-TYPE BASES

被引：0

作者：

ASHKINAZI, GA

ZOLOTAREVSKII, LY

RABKIN, PB

KHAMELIS, YS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 02期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：172 / 175

页数：4

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[1] PHOTORESPONSE PECULIARITIES OF VARIABLE-GAP P+-N-N+ DIODES
ARUTYUNYAN, VM
DARBASYAN, AT
[J]. INFRARED PHYSICS, 1989, 29 (2-4): : 689 - 692
[2] ANALYSIS OF TRANSIENT PROCESSES IN A P+-N-N+ HETEROSTRUCTURE WITH A VARIABLE-GAP BASE
ASHKINAZI, GA
TOGATOV, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 863 - 866
[3] SWITCHING OF A P-N-P-N STRUCTURE WITH VARIABLE-GAP BASES
ASHKINAZI, GA
TOGATOV, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 744 - 747
[4] SWITCHING OF A p-n-p-n STRUCTURE WITH VARIABLE-GAP BASES.
Ashkinazi, G.A.
Togatov, V.V.
[J]. Soviet physics. Semiconductors, 1980, 14 (07): : 744 - 747
[5] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P - N STRUCTURES.
Kazarinov, R.F.
Suris, R.A.
[J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 6 - 10
[6] CURRENT-VOLTAGE AND SPECTRAL CHARACTERISTICS OF VARIABLE-GAP P-N STRUCTURES
OSIPOV, VV
SOBOLEVA, TI
KHOLODNOV, VA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1361 - 1365
[7] RECOMBINATION CURRENTS IN VARIABLE-GAP P-N STRUCTURES
SOBOLEVA, TI
KHOLODNOV, VA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 685 - 686
[8] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P-N STRUCTURES
KAZARINOV, RF
SURIS, RA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 6 - 10
[9] SATURATION VOLTAGE AND CURRENT GAIN OF N+-N-P-N+ HETEROJUNCTION TRANSISTORS WITH A VARIABLE-GAP COLLECTOR
GRIGOREV, BI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 81 - 84
[10] TURN-ON CONDITION FOR A P-N-P-N STRUCTURE WITH VARIABLE-GAP BASES UNDER TRANSIENT CONDITIONS
TOGATOV, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1191 - 1195

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