共 50 条
- [1] PHOTORESPONSE PECULIARITIES OF VARIABLE-GAP P+-N-N+ DIODES [J]. INFRARED PHYSICS, 1989, 29 (2-4): : 689 - 692
- [2] VOLTAGE INTERCEPT OF P+-N-N+ STRUCTURES WITH VARIABLE-GAP N-TYPE BASES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 172 - 175
- [3] SWITCHING PROCESS ANALYSIS OF A VARIABLE-ZONE-BASE P+-N-N+ STRUCTURE [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1981, 26 (04): : 810 - 816
- [4] SWITCHING OF A P-N-P-N STRUCTURE WITH VARIABLE-GAP BASES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 744 - 747
- [5] IMPEDANCE OF A VARIABLE-GAP P-N-P STRUCTURE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1012 - 1015
- [6] VARIABLE-GAP AND BARRIER PHOTO-EMFS DEVELOPED IN A VARIABLE-GAP P-N STRUCTURE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 549 - 552
- [7] TURN-ON CONDITION FOR A P-N-P-N STRUCTURE WITH VARIABLE-GAP BASES UNDER TRANSIENT CONDITIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1191 - 1195
- [8] SWITCHING OF A p-n-p-n STRUCTURE WITH VARIABLE-GAP BASES. [J]. Soviet physics. Semiconductors, 1980, 14 (07): : 744 - 747
- [9] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P - N STRUCTURES. [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 6 - 10
- [10] TURN-ON CONDITION FOR A p-n-p-n STRUCTURE WITH VARIABLE-GAP BASES UNDER TRANSIENT CONDITIONS. [J]. Soviet physics. Semiconductors, 1980, 14 (10): : 1191 - 1195