Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

被引：0
|
作者：
Meneghini, Matteo [1 ]
Fay, Patrick [2 ]
Nath, Digbijoy [3 ]
Ng, Geok Ing [4 ]
Shi, Junxia [5 ]
Shen, Shyh-Chiang [6 ]
Buffolo, Matteo [1 ]
Medjdoub, Farid [7 ]
机构：
[1] Univ Padua, Padua, Italy
[2] Univ Notre Dame, Notre Dame, IN USA
[3] IISC Bangalore, Bengaluru, India
[4] Nanyang Technol Univ, Singapore, Singapore
[5] Univ Illinois, Chicago, IL USA
[6] Georgia Tech, Atlanta, GA USA
[7] CNRS IEMN, Lille, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 03期
关键词：
D O I：
10.1109/LED.2023.3242492
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：554 / 555
页数：2
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