Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

被引：0

作者：

Meneghini, Matteo ^{[1
]}

Fay, Patrick ^{[2
]}

Nath, Digbijoy ^{[3
]}

Ng, Geok Ing ^{[4
]}

Shi, Junxia ^{[5
]}

Shen, Shyh-Chiang ^{[6
]}

Buffolo, Matteo ^{[1
]}

Medjdoub, Farid ^{[7
]}

机构：

[1] Univ Padua, Padua, Italy

[2] Univ Notre Dame, Notre Dame, IN USA

[3] IISC Bangalore, Bengaluru, India

[4] Nanyang Technol Univ, Singapore, Singapore

[5] Univ Illinois, Chicago, IL USA

[6] Georgia Tech, Atlanta, GA USA

[7] CNRS IEMN, Lille, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 03期

关键词：

D O I：

10.1109/LED.2023.3242492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 555

页数：2

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