Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

被引：0

作者：

Meneghini, Matteo ^{[1
]}

Ng, Geok Ing ^{[2
]}

Medjdoub, Farid ^{[3
]}

Buffolo, Matteo ^{[1
]}

Warnock, Shireen ^{[4
]}

Nath, Digbijoy ^{[5
]}

Suda, Jun ^{[6
]}

Shi, Junxia ^{[7
]}

Shen, Shyh-Chiang ^{[8
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Jurong West 639798, Singapore

[3] Univ Lille, CNRS IEMN, F-59650 Villeneuve Dascq, France

[4] MIT, Lincoln Lab, Lexington, MA 02421 USA

[5] Indian Inst Sci IISc, Ctr Nano Sci & Engn CeNSE, Bengaluru 560012, India

[6] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[7] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[8] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

D O I：

10.1109/TED.2024.3359934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On behalf of myself and the other guest editors for the Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications featured in this months IEEE Transactions on Electron Devices, we are pleased to offer readers a selection of papers that span the contemporary landscape of wide and ultrawide bandgap semiconductor devices.

引用

页码：1340 / 1343

页数：4

共 50 条

[1] Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
不详
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2022, 35 (03) : 589 - 590
[2] Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
Meneghini, Matteo
Fay, Patrick
Nath, Digbijoy
Ng, Geok Ing
Shi, Junxia
Shen, Shyh-Chiang
Buffolo, Matteo
Medjdoub, Farid
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (03) : 554 - 555
[3] Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
不详
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 7205 - 7206
[4] Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"
不详
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 356 - 357
[5] Special issue on wide bandgap semiconductor devices and circuits - Guest editorial
Parikh, PA
Kazior, TE
Mishra, UK
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) : 605 - 606
[6] Wide Band Gap Power Semiconductor Devices
Millan, Jose
Godignon, Philippe
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013), 2013, : 293 - 296
[7] Special issue on MEMS devices for RF systems - Guest editorial
Rebeiz, GM
Katehi, LPB
Barker, NS
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (01) : 257 - 258
[8] Editorial for the Special Issue on Semiconductor Infrared Devices and Applications
Perera, A. G. Unil
MICROMACHINES, 2021, 12 (09)
[9] Wide band-gap power semiconductor devices
Millan, J.
IET CIRCUITS DEVICES & SYSTEMS, 2007, 1 (05) : 372 - 379
[10] Wide Band Gap Semiconductor Devices for Power Electronics
Millan, Jose
Godignon, Philippe
Perez-Tomas, Amador
AUTOMATIKA, 2012, 53 (02) : 107 - 116

← 1 2 3 4 5 →