THIN HYDROGENATED ALPHA-C-H FILMS IN SEMICONDUCTOR DIAMOND-LIKE FILM SINGLE-CRYSTAL HETEROSTRUCTURES

Diamond-like films, exhibiting many unique physical properties such as high hardness, chemical inertness, ecological cleanliness of starting materials, may be considered as future materials for heterostructures (HSs) which are the basis of various devices and units. The properties of thin hydrogenated alpha-C (alpha-C:H) films (thickness, 3.0-100.0 nm) and of single-crystal semiconductor/diamond-like film HSs formed on Si and GaAs substrates by ion-assisted deposition have been studied. The chemical composition, electronic structure and cluster composition of thin alpha-C:H films and voltage-current, voltage-capacitance and charge transient characteristics of HS by charge deep-level transient spectroscopy method have been studied. A correlation between the film thickness, the deposition conditions and the state density of the semiconductor-alpha-C:H film interface has been found. It has been shown that the production of HSs with a density of surface states of about 5 x 10(10) cm(-2) at the semiconductor-alpha-C:H film interface which is acceptable for metal-oxide-semiconductor devices is possible. Most HSs are characterized by large photocapacitor effects and very large differences in capture time and carrier injection.