Thin film CaF2 stabilizing effect on single-crystal diamond surface

被引：4
|
作者：
Yun, Y
Maki, T
Kobayashi, T
机构：
[1] Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
关键词：
diamond thin film; MIS; FET; Fermi level; SrTiO3; CaF2; surface stabilization; temperature gradient method; accumulation condition;
D O I：
10.1016/S0169-4332(97)80143-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A metal/insulator/semiconducting (MIS) diamond structure employing SrTiO3/CaF2 composite film as a gate insulator was fabricated and its electrical properties were investigated by C-V measurement. In the C-V curve, the Al/SrTiO3/CaF2/diamond MIS structure exhibited high capacitance as well as reduction of the surface state on the diamond state. In addition, the temperature gradient method during the deposition of SrTiO3 film was very effective to obtain the crack-free composite film of SrTiO3/CaF2 composite structure.
引用
收藏
页码：570 / 573
页数：4
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