GROWTH OF GAAS ON GAAS-COATED SI BY LIQUID-PHASE EPITAXY

被引：27

作者：

SAKAI, S ^{[1
]}

MATYI, RJ ^{[1
]}

SHICHIJO, H ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1075 / 1079

页数：5

共 50 条

[1] SELECTIVE LIQUID-PHASE ELECTROEPITAXY OF GAAS ON GAAS-COATED SI SUBSTRATES
SAKAI, S
OHASHI, Y
SHINTANI, Y
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4899 - 4902
[2] SELECTIVE LIQUID-PHASE EPITAXY AND DEFECT REDUCTION IN GAAS GROWN ON GAAS-COATED SILICON BY MOLECULAR-BEAM EPITAXY
SAKAI, S
MATYI, RJ
SHICHIJO, H
APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1913 - 1915
[3] PREVENTION OF SUBSTRATE MELT-BACK BY SE ADDITION DURING LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS ON GAAS-COATED SI
KIM, DK
LEE, BT
MATERIALS LETTERS, 1994, 20 (5-6) : 335 - 338
[4] TRANSIENT-MODE LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS ON GAAS-COATED SI SUBSTRATES PREPARED BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY
NAKAMURA, S
SAKAI, S
CHANG, SS
RAMASWAMY, RV
KIM, JH
RADHAKRISHNAN, G
LIU, JK
KATZ, J
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (02) : 303 - 309
[5] LIQUID-PHASE EPITAXY OF GAAS ON SI SUBSTRATES
BROVKIN, VN
KAZAKOV, AI
PRESNOV, VA
CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (10-11) : 1331 - 1336
[6] CHARACTERISTICS OF GAAS/ALGAAS HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY ON MOLECULAR-BEAM-COATED GAAS ON SI
VANDERZIEL, JP
LOGAN, RA
CHAND, N
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3201 - 3204
[7] LIQUID-PHASE EPITAXY GROWTH OF GAAS-SI BY TEMPERATURE DIFFERENCE METHOD
WEI, CC
SU, YK
CHANG, CC
LU, SC
BULLETIN OF MATERIALS SCIENCE, 1986, 8 (04) : 439 - 448
[8] GROWTH SPIRALS IN GAAS GROWN BY LIQUID-PHASE EPITAXY
KIMURA, C
YANAKI, T
HOSHINO, H
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 233 - 238
[9] ON THE NATURE OF THE EDGE GROWTH IN LIQUID-PHASE EPITAXY OF GAAS
ZYTKIEWICZ, ZR
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (04) : 919 - 922
[10] HETEROEPITAXIAL GROWTH OF GAAS ON (100)GAAS AND INP BY SELECTIVE LIQUID-PHASE EPITAXY
KIM, DK
LEE, BT
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5870 - 5874

← 1 2 3 4 5 →