TAILORING MATERIALS FOR QUANTUM-WELLS - BAND OFFSETS AT (001)-ORIENTED GAAS (AIAS)N(GAAS)M INTERFACES

被引：2
|
作者：
KARLSSON, K [1 ]
NEEDS, RJ [1 ]
QTEISH, A [1 ]
GODBY, RW [1 ]
机构：
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 23期
关键词：
D O I：
10.1088/0953-8984/2/23/018
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic structure at the interface between bulk GaAs(001) and short-period superlattices of (AlAs)n(GaAs)m has been calculated using ab initio pseudopotential techniques. The results show that the valence band offsets at such interfaces are very similar to those obtained experimentally for random alloy systems, but superior transport properties are anticipated for the ordered systems.
引用
收藏
页码：5265 / 5269
页数：5
相关论文
共 50 条
  • [1] CALCULATIONS OF BOUND-STATES IN THE VALENCE BAND OF AIAS/GAAS/AIAS AND AIGAAS/GAAS/AIGAAS QUANTUM-WELLS
    BRAND, S
    HUGHES, DT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) : 607 - 614
  • [2] DETERMINATION OF BAND OFFSETS IN ALGAAS/GAAS AND INGAAS/GAAS MULTIPLE QUANTUM-WELLS
    JI, G
    HUANG, D
    REDDY, UK
    UNLU, H
    HENDERSON, TS
    MORKOC, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1346 - 1352
  • [3] Reconfirmation of the band offsets of InGaP/GaAs quantum wells
    Kabi, Sanjib
    Das, Tapas
    Biswas, Dipankar
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (08): : 2131 - 2133
  • [4] OPTICAL-PROPERTIES OF GAAS/AIAS TYPE-II QUANTUM-WELLS
    DAWSON, P
    OPTICAL AND QUANTUM ELECTRONICS, 1990, 22 : S231 - S242
  • [5] DEPENDENCE OF BAND OFFSETS ON ELASTIC STRAIN IN GAAS/GAAS1-XPX STRAINED-LAYER SINGLE QUANTUM-WELLS
    ZHANG, X
    ONABE, K
    NITTA, Y
    ZHANG, BP
    FUKATSU, S
    SHIRAKI, Y
    ITO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1631 - L1634
  • [6] ELECTRONIC STATES OF (001) AND (311) ALAS/GAAS QUANTUM-WELLS
    CONTRERASSOLORIO, DA
    VELASCO, VR
    GARCIAMOLINER, F
    PHYSICAL REVIEW B, 1993, 48 (16): : 12319 - 12322
  • [7] PIEZOSPECTROSCOPY OF GAAS AND GAAS/GAALAS SINGLE QUANTUM-WELLS GROWN ON (001) SI SUBSTRATES
    QIANG, H
    POLLAK, FH
    SHUM, K
    TAKIGUCHI, Y
    ALFANO, RR
    FANG, SF
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2651 - 2653
  • [8] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS
    MENENDEZ, J
    PINCZUK, A
    WERDER, DJ
    GOSSARD, AC
    ENGLISH, JH
    PHYSICAL REVIEW B, 1986, 33 (12): : 8863 - 8866
  • [9] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-INXGA1-XAS QUANTUM-WELLS
    MENENDEZ, J
    PINCZUK, A
    WERDER, DJ
    CHO, AY
    SIVCO, DL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1256 - 1257
  • [10] PHOTOREFLECTANCE STUDY OF GAAS AND GAAS/GAALAS SINGLE QUANTUM-WELLS GROWN ON (001)SI SUBSTRATES
    QIANG, H
    LOOK, E
    POLLAK, FH
    SHUM, K
    TAKIGUCHI, Y
    ALFANO, RR
    FANG, SF
    MORKOC, H
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 32 (04) : 405 - 411
12345