TAILORING MATERIALS FOR QUANTUM-WELLS - BAND OFFSETS AT (001)-ORIENTED GAAS (AIAS)N(GAAS)M INTERFACES

被引：2
|
作者：
KARLSSON, K [1 ]
NEEDS, RJ [1 ]
QTEISH, A [1 ]
GODBY, RW [1 ]
机构：
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 23期
关键词：
D O I：
10.1088/0953-8984/2/23/018
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic structure at the interface between bulk GaAs(001) and short-period superlattices of (AlAs)n(GaAs)m has been calculated using ab initio pseudopotential techniques. The results show that the valence band offsets at such interfaces are very similar to those obtained experimentally for random alloy systems, but superior transport properties are anticipated for the ordered systems.
引用
收藏
页码：5265 / 5269
页数：5
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