ELECTRONIC STATES OF (001) AND (311) ALAS/GAAS QUANTUM-WELLS

被引：8
|
作者：
CONTRERASSOLORIO, DA [1 ]
VELASCO, VR [1 ]
GARCIAMOLINER, F [1 ]
机构：
[1] CSIC, INST CIENCIA MAT, E-28006 MADRID, SPAIN
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.48.12319
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic states of (001) and (31 1) AlAs/GaAs quantum wells at the kappa= (0, 0), point is studied for 2 less-than-or-equal-to n less-than-or-equal-to 20, n being the number of principal layers of GaAs in the heterostructure. The calculations are performed by using an sp3 s* empirical tight-binding model together with the surface Green-function matching method. The evolution of the energy for the different bound states versus the variation of n and the orbital character of the bound states are studied for both (001) and (311) quantum wells.
引用
收藏
页码：12319 / 12322
页数：4
相关论文
共 50 条
  • [1] PROBING THE ANISOTROPIC DISPERSION OF HOLE STATES IN (100) AND (311)A ALAS GAAS ALAS QUANTUM-WELLS
    HAYDEN, RK
    EAVES, L
    HENINI, M
    VALADARES, EC
    KUHN, O
    MAUDE, DK
    PORTAL, JC
    TAKAMASU, T
    MIURA, N
    EKENBERG, U
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (03) : 298 - 309
  • [2] STRONG ANISOTROPY OF HOLE SUBBANDS IN (311) GAAS-ALAS QUANTUM-WELLS
    VALADARES, EC
    [J]. PHYSICAL REVIEW B, 1992, 46 (07) : 3935 - 3939
  • [3] Electronic states of(211) AlAs/GaAs quantum wells
    Arriaga, J
    ContrerasSolorio, DA
    Velasco, VR
    [J]. SURFACE SCIENCE, 1996, 367 (02) : 203 - 208
  • [4] PHOTOEXCITED TRANSPORT IN GAAS ALAS QUANTUM-WELLS
    COLLINS, RT
    VONKLITZING, K
    PLOOG, K
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 406 - 408
  • [5] PHOTOLUMINESCENCE OF ALAS/GAAS SUPERLATTICE QUANTUM-WELLS
    SHIH, YCA
    STREETMAN, BG
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2655 - 2657
  • [6] GAAS ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS
    PEZESHKI, B
    LORD, SM
    HARRIS, JS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2645 - 2646
  • [7] GRADUATED HETEROJUNCTION IN GAAS/ALAS QUANTUM-WELLS
    PROCTOR, M
    OELGART, G
    RHAN, H
    REINHART, FK
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (23) : 3154 - 3156
  • [8] GAAS/ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS
    PEZESHKI, B
    LORD, SM
    BOYKIN, TB
    HARRIS, JS
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2779 - 2781
  • [9] OPTICAL CHARACTERIZATION OF THE INTERFACE IN GAAS/ALAS QUANTUM-WELLS
    DEVEAUD, B
    CHOMETTE, A
    ROY, N
    SERMAGE, B
    KATZER, DS
    [J]. SURFACE SCIENCE, 1992, 267 (1-3) : 199 - 203
  • [10] INTERFACE ROUGHNESS SCATTERING IN GAAS/ALAS QUANTUM-WELLS
    SAKAKI, H
    NODA, T
    HIRAKAWA, K
    TANAKA, M
    MATSUSUE, T
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1934 - 1936
12345