SUPERLATTICE BUFFERS FOR GAAS POWER MESFETS GROWN BY MBE

被引：32
|
作者：
SCHAFF, WJ [1 ]
EASTMAN, LF [1 ]
VANREES, B [1 ]
LILES, B [1 ]
机构：
[1] RAYTHEON SPECIAL MICROWAVE DEVICES OPERAT,NORTHBOROUGH,MA 01532
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期
关键词：
D O I：
10.1116/1.582801
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：265 / 268
页数：4
相关论文
共 50 条
  • [41] GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE
    FURUTSUKA, T
    HIGASHISAKA, A
    AONO, Y
    TAKAYAMA, Y
    HASEGAWA, F
    ELECTRONICS LETTERS, 1979, 15 (14) : 417 - 418
  • [42] GaAs microwave power offset gate MESFETs
    Lapin, VG
    Temnov, AM
    Krasnik, VA
    Petrov, KI
    11TH INTERNATIONAL CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS, 2001, : 135 - 136
  • [43] 808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice
    Zhu, DH
    Wang, ZG
    Liang, JB
    Xu, B
    Zhu, ZP
    Zhang, J
    Gong, Q
    Li, SY
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1004 - 1008
  • [44] MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS
    LIU, WC
    HSU, WC
    LOUR, WS
    WANG, RL
    CHANG, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06): : L904 - L906
  • [45] MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications
    Liu, W.C., 1600, (28):
  • [46] The effects of GaAs interval layer on GaNAs/GaAs superlattice structure grown by RF-MBE using modulated N radical beam sequence
    Fujii, Kensuke
    Kumamoto, Tsuneaki
    Oda, Yuichi
    Nishioka, Ayami
    Miyagawa, Hayato
    Tanaka, Yasuhiro
    Koshiba, Shyun
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2750 - 2752
  • [47] Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates
    Momose, H.
    Okai, H.
    Deguchi, H.
    Mori, N.
    Takeyama, S.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 309 - 312
  • [48] A NOVEL PASSIVATION TECHNIQUE OF GAAS POWER MESFETS
    TANIGUCHI, M
    MURAKAWA, T
    KAJITANI, Y
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 827 - 831
  • [49] DESIGN AND LAYOUT CONSIDERATIONS FOR GAAS POWER MESFETS
    GOODMAN, SA
    VANDEMERWE, DG
    SNYMAN, LW
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (3-4) : 100 - 103
  • [50] Relaxed GeSi alloy grown on low-temperature buffers by MBE
    Peng, CS
    Huang, Q
    Zhou, JM
    Zhang, YH
    Tung, CH
    Sheng, TT
    Wang, J
    SILICON-BASED OPTOELECTRONICS, 1999, 3630 : 231 - 236
12345