SUPERLATTICE BUFFERS FOR GAAS POWER MESFETS GROWN BY MBE

被引：32
|
作者：
SCHAFF, WJ [1 ]
EASTMAN, LF [1 ]
VANREES, B [1 ]
LILES, B [1 ]
机构：
[1] RAYTHEON SPECIAL MICROWAVE DEVICES OPERAT,NORTHBOROUGH,MA 01532
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期
关键词：
D O I：
10.1116/1.582801
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：265 / 268
页数：4
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