PHOSPHORUS DISTRIBUTION IN TASI2 FILMS BY DIFFUSION FROM A POLYCRYSTALLINE SILICON LAYER

被引：23
|
作者：
PELLEG, J
MURARKA, SP
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期
关键词：
D O I：
10.1063/1.332208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1337 / 1345
页数：9
相关论文
共 50 条
  • [31] INFLUENCE OF DOPANTS AND DEPOSITION TEMPERATURES ON THE PROPERTIES OF TASI2/POLYSILICON FILMS AND THEIR THERMAL OXIDES
    GANT, H
    BOETTICHER, H
    DEPPE, HR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1668 - 1675
  • [32] Formation of crystalline structure of a film TaSi2 oil single-crystal silicon
    Sveshnikov, VL
    Sidorenko, SL
    Makogon, YM
    Dzyaruk, OO
    Kotenko, IY
    Mokhort, VA
    Nesterenko, YV
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2002, 24 (12): : 1657 - 1664
  • [33] Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process: Influence of the nitridation temperature
    Yckache, K.
    Boivin, P.
    Baiget, F.
    Radjaa, S.
    Auriel, G.
    Sagnes, B.
    Oualid, J.
    Glachant, A.
    Microelectronics Reliability, 1998, 38 (6-8): : 937 - 942
  • [34] PROPERTIES OF EVAPORATED AND SPUTTERED TASI2 FILMS AND THE INFLUENCE OF THE RESIDUAL-GAS COMPOSITION
    NEPPL, F
    SCHWABE, U
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 508 - 511
  • [35] Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films
    Bourdais, S
    Beaucarne, G
    Slaoui, A
    Poortmans, J
    Semmache, B
    Dubois, C
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) : 487 - 493
  • [36] Influence of the structure-phase composition of the TaSi2 thin films on their mechanical properties
    Dub, SM
    Makogon, YM
    Pavlova, OP
    Sidorenko, SI
    Zelenin, VO
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2002, 24 (01): : 61 - 73
  • [37] CHARACTERISTICS OF TASI2/POLY-SI FILMS OXIDIZED IN STEAM FOR VLSI APPLICATIONS
    DEBLASI, JM
    RAZOUK, RR
    THOMAS, ME
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2478 - 2482
  • [38] GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON
    HOLLOWAY, PH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 19 - 22
  • [39] GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON
    MURTI, MR
    REDDY, KV
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (08) : 622 - 625
  • [40] INFLUENCE OF SLIGHT DEVIATIONS FROM TASI2 STOICHIOMETRY ON THE HIGH-TEMPERATURE STABILITY OF TANTALUM SILICIDE SILICON CONTACTS
    OPPOLZER, H
    NEPPL, F
    HIEBER, K
    HUBER, V
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 630 - 635
12345