TWIN BOUNDARIES IN C54-TISI2

被引：7
|
作者：
RAJAN, K
机构：
[1] Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, 12180-3590, NY
来源：
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1990年 / 21卷 / 09期
关键词：
D O I：
10.1007/BF02646978
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A large-grained microstructure of C54-TiSi2 has been produced by rapid thermal annealing of Ti/Si thin film couples. Unlike the metastable C49-TiSi2 phase, which is heavily faulted, the C54-TiSi2 is relatively fault-free. We have, however, observed for the first time the presence of twins in C54-TiSi2. The presence of twinning is explained by an atomic model for polytypism in this structure. The faceting of twin boundaries and the dissociation of grain boundaries have also been observed for the first time in C54-TiSi2. It is proposed that the latter observations are related to boundary migration. © 1990 The Metallurgical of Society of AIME.
引用
收藏
页码：2317 / 2322
页数：6
相关论文
共 50 条
  • [11] Coaxial Metal-Silicide Ni2Si/C54-TiSi2 Nanowires
    Chen, Chih-Yen
    Lin, Yu-Kai
    Hsu, Chia-Wei
    Wang, Chiu-Yen
    Chueh, Yu-Lun
    Chen, Lih-Juann
    Lo, Shen-Chuan
    Chou, Li-Jen
    NANO LETTERS, 2012, 12 (05) : 2254 - 2259
  • [12] Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer
    C. Cabral
    L. A. Clevenger
    J. M. E. Harper
    F. M. d’Heurle
    R. A. Roy
    K. L. Saenger
    G. L. Miles
    R. W. Mann
    Journal of Materials Research, 1997, 12 : 304 - 307
  • [13] Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(001) and Si(111) substrates
    Geenen, F. A.
    Jordan-Sweet, J.
    Lavoie, C.
    Detavernier, C.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (44)
  • [14] Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing
    Clevenger, L.A.
    Mann, R.W.
    Roy, R.A.
    Saenger, K.L.
    Cabral, C. Jr.
    Piccirillo, J.
    Journal of Applied Physics, 1994, 76 (12):
  • [15] Microstructure imaging of C54-TiSi2 polycrystalline thin films by micro-Raman spectroscopy
    Meinardi, F
    Quilici, S
    Borghesi, A
    Artioli, G
    APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3090 - 3092
  • [16] Transmission electron microscopy investigation of the formation of C54-TiSi2 phase on stressed (001)Si
    Cheng, SL
    Chang, SM
    Huang, HY
    Chen, LJ
    Tsai, CJ
    MICRON, 2002, 33 (06) : 543 - 547
  • [17] C54-TISI2 FORMED BY DIRECT HIGH-CURRENT TI-ION IMPLANTATION
    ZHU, DH
    TAO, K
    PAN, F
    LIU, BX
    APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2356 - 2358
  • [18] Microstructure imaging of C54-TiSi2 polycrystalline thin films by micro-Raman spectroscopy
    INFM-Dipto. di Scienza dei Materiali, Università di Milano-Bicocca, I-20125 Milano, Italy
    不详
    Appl Phys Lett, 20 (3090-3092):
  • [19] Formation enhancement of the C54-TiSi2 by a multi-cycle pre-cooling treatment
    Zhang, L
    Lee, YK
    Park, HS
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (1-2): : 213 - 218
  • [20] Reduction of the C54-TiSi2 phase transformation temperature using refractory metal ion implantation
    Mann, RW
    Miles, GL
    Knotts, TA
    Rakowski, DW
    Clevenger, LA
    Harper, JME
    DHeurle, FM
    Cabral, C
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3729 - 3731
12345