INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS

被引：82
|
作者：
ARENT, DJ
NILSSON, S
GALEUCHET, YD
MEIER, HP
WALTER, W
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期
关键词：
D O I：
10.1063/1.101952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2611 / 2613
页数：3
相关论文
共 50 条
  • [41] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS
    MCCOLLUM, MJ
    SZAFRANEK, I
    PLANO, MA
    JACKSON, SL
    STOCKMAN, SA
    STILLMAN, GE
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 14 - 15
  • [42] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176
  • [43] Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates
    Faculty of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
    不详
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4435 - 4437
  • [44] Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates
    Mashita, M
    Hiyama, Y
    Arai, K
    Koo, BH
    Yao, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4435 - 4437
  • [45] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ALAS AND GAAS ALGAAS QUANTUM-WELLS ON SUB-MICRON-PERIOD CORRUGATED SUBSTRATES
    TURCO, FS
    SIMHONY, S
    KASH, K
    HWANG, DM
    RAVI, TS
    KAPON, E
    TAMARGO, MC
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (04) : 766 - 772
  • [46] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SINGLE-CRYSTAL AL FILMS ON GAAS (110)
    PRINZ, GA
    FERRARI, JM
    GOLDENBERG, M
    APPLIED PHYSICS LETTERS, 1982, 40 (02) : 155 - 157
  • [47] GROWTH BY MOLECULAR-BEAM EPITAXY AND PHOTOLUMINESCENCE OF INGAAS/GAAS QUANTUM-WELLS ON GAAS (111)A SUBSTRATES
    VACCARO, PO
    TAKAHASHI, M
    FUJITA, K
    WATANABE, T
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8037 - 8041
  • [48] EFFECT OF SUBSTRATE ANNEALING AND V-III FLUX RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS-GAAS SINGLE QUANTUM WELLS
    MAKI, PA
    PALMATEER, SC
    WICKS, GW
    EASTMAN, LF
    CALAWA, AR
    JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 1051 - 1063
  • [49] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS
    KOJIMA, N
    SATO, K
    BUDIMAN, M
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    NAKAMURA, Y
    NITTONO, O
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1175 - 1179
  • [50] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMICONDUCTORS
    BACHRACH, RZ
    THIN SOLID FILMS, 1978, 54 (01) : 49 - 49
12345