STABILITY OF ELECTRICAL-PROPERTIES OF NITROGEN-RICH, SILICON-RICH, AND STOICHIOMETRIC SILICON-NITRIDE FILMS

被引：46
|
作者：
LAU, WS
FONASH, SJ
KANICKI, J
机构：
[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802
[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期
关键词：
D O I：
10.1063/1.344202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2765 / 2767
页数：3
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