共 50 条
- [21] HELIUM-TEMPERATURE ANNEALING OF ELECTRON-IRRADIATED N-TYPE GERMANIUM PHYSICAL REVIEW B, 1971, 4 (06): : 1903 - &
- [22] POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED N-TYPE GAP CRYSTALS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 79 (1-4): : 123 - 130
- [23] Li-defect interactions in electron-irradiated n-type silicon PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4110 - 4117
- [26] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305
- [28] Electron Paramagnetic Resonance study on n-type electron-irradiated 3C-SiC PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100