INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.

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作者：

Vavilov, V.S.

Glaxman, V.B.

Isaev, N.U.

Mukashev, B.N.

Spitsyn, A.V.

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来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 03期

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摘要：

SEMICONDUCTING SILICON

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页码：303 / 305

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