INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.

被引：0
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作者：
Vavilov, V.S.
Glaxman, V.B.
Isaev, N.U.
Mukashev, B.N.
Spitsyn, A.V.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 03期
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摘要：
SEMICONDUCTING SILICON
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页码：303 / 305
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