INTRINSIC GETTERING IN OXYGEN-FREE SILICON

被引：11

|

作者：

NAUKA, N

LAGOWSKI, J

GATOS, HC

LI, CJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：673 / 675

页数：3

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