CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE

被引:27
|
作者
GEBHARDT, JJ
TANZILLI, RA
HARRIS, TA
机构
[1] DIV SPACE,SPACE SCI LAB,PHILADELPHIA,PA 19101
[2] GE,DIV RE ENTRY & ENVIRONM SYST,PHILADELPHIA,PA 19101
关键词
D O I
10.1149/1.2132642
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1578 / 1582
页数:5
相关论文
共 50 条
  • [31] SELECTIVE AREA DEPOSITION OF SILICON-NITRIDE AND SILICON-OXIDE BY LASER CHEMICAL VAPOR-DEPOSITION AND FABRICATION OF MICROLENSES
    SUGIMURA, A
    FUKUDA, Y
    HANABUSA, M
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3222 - 3227
  • [32] DIRECT PHOTO CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE AND ITS APPLICATION TO MIS STRUCTURE
    YOSHIMOTO, M
    TAKUBO, K
    SAITO, T
    OHTSUKI, T
    KOMODA, M
    MATSUNAMI, H
    IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (09) : 1019 - 1024
  • [33] EFFECT OF THERMAL-TREATMENT OF PASSIVATION INTEGRITY OF CHEMICAL VAPOR-DEPOSITION SILICON-NITRIDE
    DOMANSKY, K
    PETELENZ, D
    JANATA, J
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2074 - 2076
  • [34] LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE
    DU, HH
    GALLOIS, B
    GONSALVES, KE
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (03) : 764 - 766
  • [35] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
    INADA, T
    OHKUBO, T
    SAWADA, S
    HARA, T
    NAKAJIMA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1525 - 1529
  • [36] STRONG PIEZOELECTRICITY IN NANOSIZED SILICON-NITRIDE PREPARED BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION
    WANG, WX
    LI, DH
    LIU, ZC
    LIU, SH
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 321 - 322
  • [37] GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS PRODUCED BY REMOTE MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION
    LANDHEER, D
    SKINNER, NG
    JACKMAN, TE
    THOMPSON, DA
    SIMMONS, JG
    STEVANOVIC, DV
    KHATAMIAN, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (05): : 2594 - 2601
  • [38] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS - FILM AND PROCESS CHARACTERIZATIONS
    PAN, ETS
    FLINT, JH
    ADLER, D
    HAGGERTY, JS
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4535 - 4539
  • [39] PROPERTIES OF SILICON-NITRIDE FILMS PRODUCED BY RF PLASMA-ACTIVATED CHEMICAL VAPOR-DEPOSITION
    CATHERINE, Y
    TURBAN, G
    THIN SOLID FILMS, 1977, 41 (03) : L57 - L90
  • [40] HYBRID-EXCITATION CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE ON (100)SI - THE FILM AND INTERFACE PROPERTIES
    YAMAMOTO, S
    MIGITAKA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 348 - 354