AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT

被引：12
|
作者：
LOHNER, T
MEZEY, G
KOTAI, E
MANUABA, A
PASZTI, F
DEVENYI, A
GYULAI, J
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 199卷 / 1-2期
关键词：
D O I：
10.1016/0167-5087(82)90244-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：405 / 408
页数：4
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