AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT

被引:12
|
作者
LOHNER, T
MEZEY, G
KOTAI, E
MANUABA, A
PASZTI, F
DEVENYI, A
GYULAI, J
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关键词
D O I
10.1016/0167-5087(82)90244-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:405 / 408
页数:4
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