ELECTRONIC-STRUCTURE CALCULATION OF POINT-DEFECTS IN SILICON

被引：2
|
作者：
BEELER, F [1 ]
ANDERSEN, OK [1 ]
GUNNARSSON, O [1 ]
JEPSEN, O [1 ]
SCHEFFLER, M [1 ]
机构：
[1] PHYS TECH BUNDESANSTALT, D-3300 BRUNSWICK, FED REP GER
来源：
COMPUTER PHYSICS COMMUNICATIONS | 1987年 / 44卷 / 03期
关键词：
CHALCOGEN IMPURITIES - COMPUTATIONAL PHYSICS - ELECTRONIC-STRUCTURE CALCULATION - POINT DEFECTS;
D O I：
10.1016/0010-4655(87)90085-3
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
(Edited Abstract)
引用
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收藏
页码：297 / 305
页数：9
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