ELECTRONIC-STRUCTURE CALCULATION OF POINT-DEFECTS IN SILICON

被引：2

作者：

BEELER, F ^{[1
]}

ANDERSEN, OK ^{[1
]}

GUNNARSSON, O ^{[1
]}

JEPSEN, O ^{[1
]}

SCHEFFLER, M ^{[1
]}

机构：

[1] PHYS TECH BUNDESANSTALT, D-3300 BRUNSWICK, FED REP GER

来源：

关键词：

CHALCOGEN IMPURITIES - COMPUTATIONAL PHYSICS - ELECTRONIC-STRUCTURE CALCULATION - POINT DEFECTS;

D O I：

10.1016/0010-4655(87)90085-3

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

(Edited Abstract)

引用

页码：297 / 305

页数：9

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