SUBTHRESHOLD SLOPE FOR INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：12
|
作者：
TROUTMAN, RR [1 ]
机构：
[1] IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期
关键词：
D O I：
10.1109/T-ED.1975.18269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1049 / 1051
页数：3
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