SUBTHRESHOLD SLOPE FOR INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：12

作者：

TROUTMAN, RR ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期

关键词：

D O I：

10.1109/T-ED.1975.18269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1049 / 1051

页数：3

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