INFLUENCE OF ION-IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON

被引：0
|
作者：
ROMANOV, OV [1 ]
URITSKII, VY [1 ]
YAFYASOV, AM [1 ]
机构：
[1] AA ZHDANOV STATE UNIV,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：198 / 201
页数：4
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