CLEAVAGE REACTIONS OF SILICON-SILICON BOND OF HEXAPHENYLDISILANE

被引：3
|
作者：
TSAI, TT
LEHN, WL
MARSHALL, CJ
机构：
来源：
JOURNAL OF ORGANIC CHEMISTRY | 1966年 / 31卷 / 09期
关键词：
D O I：
10.1021/jo01347a501
中图分类号：
O62 [有机化学];
学科分类号：
070303 ; 081704 ;
摘要：
引用
收藏
页码：3047 / &
相关论文
共 50 条
  • [41] Twist of a Silicon-Silicon Double Bond: Selective Anti-Addition of Hydrogen to an Iminodisilene
    Wendel, Daniel
    Szilvasi, Tibor
    Jandl, Christian
    Inoue, Shigeyoshi
    Rieger, Bernhard
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (27) : 9156 - 9159
  • [42] Annealing of silicon-silicon dioxide structures
    Safarov, AS
    Egamberdiev, BE
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1998, 43 (02) : 211 - 212
  • [43] Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride
    Volodin, V. A.
    Gritsenko, V. A.
    Chin, A.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (05) : 424 - 427
  • [44] THE BONDED UNIPOLAR SILICON-SILICON JUNCTION
    BENGTSSON, S
    ANDERSSON, GI
    ANDERSSON, MO
    ENGSTROM, O
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 124 - 140
  • [45] Photosensitivity of porous silicon-silicon heterostructures
    Astrova, EV
    Lebedev, AA
    Remenyuk, AD
    Rud, YV
    Rud, VY
    SEMICONDUCTORS, 1997, 31 (02) : 121 - 123
  • [46] REACTIVITY OF HYPERVALENT SPECIES OF SILICON - CLEAVAGE OF THE ALLYL SILICON BOND
    CERVEAU, G
    CHUIT, C
    CORRIU, RJP
    REYE, C
    JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1987, 328 (03) : C17 - C20
  • [47] Photosensitivity of porous silicon-silicon heterostructures
    E. V. Astrova
    A. A. Lebedev
    A. D. Remenyuk
    Yu. V. Rud’
    V. Yu. Rud’
    Semiconductors, 1997, 31 : 121 - 123
  • [48] Atomistic modeling of the fracture toughness of silicon and silicon-silicon interfaces
    Evgeniya Dontsova
    Roberto Ballarini
    International Journal of Fracture, 2017, 207 : 99 - 122
  • [49] SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY
    BOYD, IW
    WILSON, JIB
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3195 - 3200
  • [50] PARAMAGNETIC DEFECTS IN SILICON-SILICON DIOXIDE SYSTEMS
    CAPLAN, PJ
    HELBERT, JN
    WAGNER, BE
    POINDEXTER, EH
    SURFACE SCIENCE, 1976, 54 (01) : 33 - 42
12345