THERMAL NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS

被引：31

|

作者：

BRUNCKE, WC

VANDERZI.A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 03期

关键词：

D O I：

10.1109/T-ED.1966.15688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：323 / +

页数：1

相关论文

共 50 条

[31] SEPARATE NOISE MEASUREMENTS OF GATE AND CHANNEL FLUCTUATIONS IN FIELD-EFFECT TRANSISTORS
KARBA, LP
KARPOV, YS
POLITOV, NN
FOMICHEV, VI
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1974, 19 (07): : 1503 - 1510
[32] Effect of induced gate noise at zero drain bias in field-effect transistors
Jindal, RP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (03) : 432 - 434
[33] BURNOUT OF JUNCTION FIELD-EFFECT TRANSISTORS
LONG, DM
SWANT, DH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 149 - 157
[34] EXCESS GATE-LEAKAGE CURRENT OF INGAAS JUNCTION FIELD-EFFECT TRANSISTORS
OHNAKA, K
SHIBATA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4714 - 4717
[35] ALPHA-SIC BURIED-GATE JUNCTION FIELD-EFFECT TRANSISTORS
KELNER, G
BINARI, S
SHUR, M
SLEGER, K
PALMOUR, J
KONG, H
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4): : 121 - 124
[36] CHARACTERISTICS OF JUNCTION-GATE FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH
CHIU, TL
GHOSH, HN
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1307 - &
[37] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS - COMMENT
SINGH, DN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) : 596 - 597
[38] GENERATION NOISE RESISTANCE IN JUNCTION FIELD-EFFECT TRANSISTORS AT PINCH-OFF
HASLETT, JW
TROFIMENKOFF, FN
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (09) : 747 - +
[39] Physics of high-frequency noise in insulated gate field-effect transistors
Jindal, R. P.
[J]. 2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2007, : 51 - 56
[40] NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES
BAECHTOLD, W
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 97 - +

← 1 2 3 4 5 →