REACTIVE ION-PLASMA BEAM ETCHING OF SILICON-CARBIDE

被引:0
|
作者
POPOV, IV
SYRKIN, AL
CHELNOKOV, VE
机构
来源
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1986年 / 12卷 / 04期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:240 / 243
页数:4
相关论文
共 50 条
  • [1] REACTIVE ION-BEAM ETCHING OF SILICON-CARBIDE
    MATSUI, S
    MIZUKI, S
    YAMATO, T
    ARITOME, H
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L38 - L40
  • [2] REACTIVE ION ETCHING OF SILICON-CARBIDE (SIXC1-X)
    DARTNELL, NJ
    FLOWERS, MC
    GREEF, R
    ZHU, J
    BLACKBURN, A
    VACUUM, 1995, 46 (04) : 349 - 355
  • [3] Interference of the Luminescent Glow of Silicon Dioxide during Reactive Ion-Plasma Etching**
    A. V. Abramov
    E. A. Pankratova
    I. S. Surovtsev
    Journal of Applied Spectroscopy, 2020, 87 : 208 - 211
  • [4] Interference of the Luminescent Glow of Silicon Dioxide during Reactive Ion-Plasma Etching*
    Abramov, A., V
    Pankratova, E. A.
    Surovtsev, I. S.
    JOURNAL OF APPLIED SPECTROSCOPY, 2020, 87 (02) : 208 - 211
  • [5] A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
    Racka-Szmidt, Katarzyna
    Stonio, Bartlomiej
    Zelazko, Jaroslaw
    Filipiak, Maciej
    Sochacki, Mariusz
    MATERIALS, 2022, 15 (01)
  • [6] Deep reactive ion etching of silicon carbide
    Tanaka, S
    Rajanna, K
    Abe, T
    Esashi, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2173 - 2176
  • [7] ETCHING OF SILICON-CARBIDE BY CHLORINE
    BALOOCH, M
    OLANDER, DR
    SURFACE SCIENCE, 1992, 261 (1-3) : 321 - 334
  • [8] Direct measurement of potentials in a reactive ion-plasma etching system
    Abramov A.V.
    Applied Physics, 2021, (03): : 26 - 32
  • [9] Direct Measurement of Potentials in the Reactive Ion-Plasma Etching System
    Abramov, A., V
    PLASMA PHYSICS REPORTS, 2022, 48 (01) : 69 - 73
  • [10] THE ETCHING BEHAVIOR OF SILICON-CARBIDE COMPACTS
    JEPPS, NW
    PAGE, TF
    JOURNAL OF MICROSCOPY-OXFORD, 1981, 124 (DEC): : 227 - 237