CHARACTERIZATION OF ELECTRICAL-PROPERTIES OF OXYGEN HYDROGEN RICH SILICON-NITRIDE FILMS FOR MNOS DEVICES

被引：0
|
作者：
XU, D [1 ]
KAPOOR, VJ [1 ]
机构：
[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,ELECTR DEVICES & MAT RES LAB,CINCINNATI,OH 45221
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C361 / C361
页数：1
相关论文
共 50 条
  • [41] STRUCTURE AND ELECTRICAL-PROPERTIES OF TITANIUM NITRIDE FILMS
    IGASAKI, Y
    MITSUHASHI, H
    AZUMA, K
    MUTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) : 85 - 96
  • [42] INFLUENCE OF SILICON-NITRIDE DEPOSITION CONDITIONS ON THE ELECTRICAL-PROPERTIES OF OXIDE-NITRIDE (ON) DIELECTRICS ON SMOOTH AND AS-DEPOSITED RUGGED POLYCRYSTALLINE SILICON
    CHAN, HC
    MATHEWS, VK
    TURNER, C
    FAZAN, PC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 2742 - 2746
  • [43] THERMOPHYSICAL PROPERTIES OF LOW-RESIDUAL STRESS, SILICON-RICH, LPCVD SILICON-NITRIDE FILMS
    MASTRANGELO, CH
    TAI, YC
    MULLER, RS
    SENSORS AND ACTUATORS A-PHYSICAL, 1990, 23 (1-3) : 856 - 860
  • [44] Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices
    Xie, Min
    Li, Dongsheng
    Wang, Feng
    Yang, Deren
    NANOCRYSTAL EMBEDDED DIELECTRICS FOR ELECTRONIC AND PHOTONIC DEVICE S, 2011, 35 (18): : 3 - 19
  • [45] HYDROGEN ION-IMPLANTED SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS
    SCHALCH, D
    SCHARMANN, A
    WOLFRAT, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02): : K81 - K86
  • [46] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS
    YOKOYAMA, S
    KAJIHARA, N
    HIROSE, M
    OSAKA, Y
    YOSHIHARA, T
    ABE, H
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5470 - 5474
  • [47] The influence of annealing on the electrical and optical properties of Silicon-rich Silicon Nitride Films
    Czarnacka, Karolina
    Komarov, F. F.
    PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2016, 2016, 10031
  • [48] PHYSICOCHEMICAL PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE FILMS
    EFIMOV, VM
    PANOVA, ZV
    MALYGYN, AV
    KOVCHAVTSEV, AP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (02): : 483 - 490
  • [49] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY PHOTO-ASSISTED CHEMICAL-VAPOR-DEPOSITION UNDER CONTROLLED DECOMPOSITION OF AMMONIA
    YOSHIMOTO, M
    OHTSUKI, T
    TAKUBO, K
    KOMODA, M
    MATSUNAMI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6132 - 6136
  • [50] FIXED HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY PLASMOCHEMICAL DEPOSITION
    ALEKSANDROV, SE
    HITCHMAN, ML
    KOVALGIN, AY
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 1994, 67 (01) : 128 - 133
12345