EPR OF DEEP CENTERS IN CR-DOPED GAAS

被引：0
|
作者：
KREBS, JJ [1 ]
STAUSS, GH [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1976年 / 21卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：89 / 89
页数：1
相关论文
共 50 条
  • [21] Photoluminescence study of deep levels in Cr-doped ZnSe
    Bhaskar, S
    Dobal, PS
    Rai, BK
    Katiyar, RS
    Bist, HD
    Ndap, JO
    Burger, A
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 439 - 443
  • [22] PRECIPITATE IDENTIFICATION IN V-DOPED AND CR-DOPED LEC GROWN GAAS
    COCKAYNE, B
    MACEWAN, WR
    HARRIS, IR
    SMITH, NA
    JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 180 - 182
  • [23] EPR and optical studies of Cr-doped PbWO4 single crystals
    Li, Weifeng
    Feng, Xiqi
    OPTICAL MATERIALS, 2007, 29 (05) : 457 - 461
  • [24] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
    FAVENNEC, PN
    HARIDON, HL
    APPLIED PHYSICS LETTERS, 1979, 35 (09) : 699 - 701
  • [25] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS
    KITAHARA, K
    NAKAI, K
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344
  • [26] TRUE MOBILITIES IN SEMI-INSULATING O-DOPED AND CR-DOPED GAAS
    LOOK, DC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 174 - 174
  • [27] THERMAL-CONDUCTIVITY OF CR-DOPED GAAS AT LOW-TEMPERATURE
    VUILLERMOZ, PL
    LAUGIER, A
    MAI, C
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4623 - 4626
  • [28] DEEP-LEVEL LUMINESCENCE OF CR-DOPED GAASP ALLOYS
    FUJIWARA, Y
    KOJIMA, A
    NISHINO, T
    HAMAKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L4 - L6
  • [29] Oxidation state and localization of chromium ions in Cr-doped cassiterite and Cr-doped malayaite
    Lopez-Navarrete, E
    Caballero, A
    Orera, VM
    Lázaro, FJ
    Ocaña, M
    ACTA MATERIALIA, 2003, 51 (08) : 2371 - 2381
  • [30] STRUCTURALLY SENSITIVE DEEP CENTERS IN LIGHTLY DOPED GAAS
    BOLSHEVA, YN
    VORONKOV, VV
    GLORIOZOVA, RI
    KOLESNIK, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 179 - 180
12345