THE ENHANCEMENT OF QUANTUM-WELL INTERMIXING THROUGH REPEATED ION-IMPLANTATION

被引：19
|
作者：
POOLE, PJ
PIVA, PG
BUCHANAN, M
AERS, GC
ROTH, AP
DION, M
WASILEWSKI, ZR
KOTELES, ES
CHARBONNEAU, S
BEAUVAIS, J
机构：
[1] NATL RES COUNCIL CANADA,SOLID STATE OPTOELECTR CONSORTIUM,OTTAWA K1A 0R6,ON,CANADA
[2] UNIV SHERBROOKE,DEPT ELECT ENGN,SHERBROOKE J1K 2R1,PQ,CANADA
[3] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ON,CANADA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期
关键词：
D O I：
10.1088/0268-1242/9/11/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum well (QW) intermixing has been performed using low-energy broad-area ion implantation to increase the bandgap energy in a spatially selective manner. There is a maximum single dose beyond which further intermixing of the aws is impeded by damage to the semiconductor surface. We demonstrate that this problem can be overcome by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have observed shifts in optical bandgap for multiple implants greater than 2.5 times that observed for a single implant.
引用
收藏
页码：2134 / 2137
页数：4
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