PHOTOLUMINESCENCE SPECTRA OF SI-IMPLANTED GAAS

被引：4
|
作者：
SHIGETOMI, S [1 ]
MATSUMORI, T [1 ]
机构：
[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,SHIBUYA KU,TOKYO 151,JAPAN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 89卷 / 01期
关键词：
D O I：
10.1002/pssa.2210890162
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K79 / K82
页数：4
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