INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE

被引：2
|
作者：
HOSCHL, P
MORAVEC, P
GRILL, R
FRANC, J
BELAS, E
机构：
[1] Institute of Physics, Charles University, Praha 2, 121 16
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1990年 / 40卷 / 01期
关键词：
D O I：
10.1007/BF01598354
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effective mass of heavy holes has been determined on the basis of simultaneous analysis of the Hall coefficient and conductivity data obtained in the temperature region 100-300 K on well characterized p-type Hg1-xCdxTe (x≈0·2) samples. Its value is ≈0·7m0. The calculation of intrinsic carrier concentration for 0·19≦ x≦0·3 and 50 Kg ≦T≦ 300 K has been carried out using the above value of the effective mass of holes, Hansen's expression for the band gap and momentum matrix element from magneto-optical measurements. © 1990 Academia, Publishing House of the Czechoslovak Academy of Sciences.
引用
收藏
页码：48 / 56
页数：9
相关论文
共 50 条
  • [1] INTRINSIC CARRIER CONCENTRATION OF HG1-XCDXTE
    NEMIROVSKY, Y
    FINKMAN, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8107 - 8111
  • [2] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE
    HANSEN, GL
    SCHMIT, JL
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1639 - 1640
  • [3] EXPRESSION FOR INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE
    YADAVA, RDS
    [J]. SOLID STATE COMMUNICATIONS, 1994, 92 (04) : 357 - 360
  • [4] INTRINSIC CARRIER CONCENTRATIONS AND EFFECTIVE MASSES IN HG1-XCDXTE
    MADARASZ, FL
    SZMULOWICZ, F
    MCBATH, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 361 - 365
  • [5] EFFECT OF IONIZED INTRINSIC POINT-DEFECTS ON CURRENT-CARRIER CONCENTRATION IN HG1-XCDXTE
    LUTSIV, RV
    PETROV, PP
    RUD, NA
    MATVIIV, MV
    SOLSKII, IM
    [J]. INORGANIC MATERIALS, 1976, 12 (05) : 705 - 708
  • [6] DEFECT CHEMISTRY AND INTRINSIC CARRIER CONCENTRATION FOR HG1-XCDXTE(S) FOR X = 0.20, 0.40, AND 1.0
    SU, CH
    LIAO, PK
    BREBRICK, RF
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 771 - 826
  • [7] Study of the deep levels in Hg1-xCdxTe by using mobility and carrier concentration
    Li, XY
    Hu, XW
    Lu, HQ
    Zhao, J
    Fang, JX
    [J]. DETECTORS, FOCAL PLANE ARRAYS, AND IMAGING DEVICES II, 1998, 3553 : 71 - 76
  • [8] INTRINSIC CARRIER CONCENTRATIONS IN HG1-XCDXTE WITH THE USE OF FERMI-DIRAC STATISTICS
    MADARASZ, FL
    SZMULOWICZ, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2770 - 2772
  • [9] Measurement of minority carrier lifetime in Hg1-xCdxTe photodetector
    Cui, H. Y.
    Li, Z. F.
    Xu, X. Y.
    Liu, Z. L.
    Quan, Z. J.
    Lu, W.
    [J]. CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2006, : 325 - 325
  • [10] Growth and physics of Hg1-xCdxTe and type IIIHgTe/Hg1-xCdxTe heterostructures
    Becker, CR
    Zhang, XC
    Ortner, K
    Schmidt, J
    Pfeuffer-Jeschke, A
    Latussek, V
    Landwehr, G
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 61 - 64
12345