INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE

被引：2
|
作者：
HOSCHL, P
MORAVEC, P
GRILL, R
FRANC, J
BELAS, E
机构：
[1] Institute of Physics, Charles University, Praha 2, 121 16
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1990年 / 40卷 / 01期
关键词：
D O I：
10.1007/BF01598354
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effective mass of heavy holes has been determined on the basis of simultaneous analysis of the Hall coefficient and conductivity data obtained in the temperature region 100-300 K on well characterized p-type Hg1-xCdxTe (x≈0·2) samples. Its value is ≈0·7m0. The calculation of intrinsic carrier concentration for 0·19≦ x≦0·3 and 50 Kg ≦T≦ 300 K has been carried out using the above value of the effective mass of holes, Hansen's expression for the band gap and momentum matrix element from magneto-optical measurements. © 1990 Academia, Publishing House of the Czechoslovak Academy of Sciences.
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收藏
页码：48 / 56
页数：9
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