INVESTIGATION OF RUTHENIUM SCHOTTKY CONTACTS TO N-GAAS

被引：2
|
作者：
PRASAD, K [1 ]
机构：
[1] UNIV WESTERN AUSTRALIA,DEPT ELECT & ELECTR ENGN,NEDLANDS,WA 6009,AUSTRALIA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 06期
关键词：
D O I：
10.1007/BF00324326
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ruthenium was evaporated on n-GaAs to form Schottky contacts. Initial electrical measurements revealed a near ideal Schottky behaviour with low leakage currents. The Schottky diodes exhibit good stability upon thermal aging at elevated temperatures up to 300-degrees-C. However, the diode parameters rapidly deteriorate after aging at temperatures in excess of 400-degrees-C. The room temperature (300 K) median life of the diodes, based on a failure criterion of a tenfold increase in the diode saturation current, J(s)riv, from reverse bias current-voltage (I-V) data, was of the order of 10(4) h.
引用
收藏
页码：493 / 496
页数：4
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