METALLIZATION SCHEME FOR N-GAAS SCHOTTKY DIODES INCORPORATING SINTERED CONTACTS AND A W DIFFUSION BARRIER

被引：24
|
作者：
SINHA, AK [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 04期
关键词：
D O I：
10.1063/1.88103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：171 / 173
页数：3
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