THE DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：54
|
作者：
BOUKERCHE, M
WIJEWARNASURIYA, PS
SIVANANTHAN, S
SOU, IK
KIM, YJ
MAHAVADI, KK
FAURIE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.575610
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2830 / 2833
页数：4
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