MERCURY CADMIUM TELLURIDE N-ISOTYPE HETEROJUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY

被引：2
|
作者：
BOUKERCHE, M
SOU, IK
DESOUZA, M
YOO, SS
FAURIE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期
关键词：
D O I：
10.1116/1.574229
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：3119 / 3123
页数：5
相关论文
共 50 条
  • [1] MERCURY CADMIUM TELLURIDE JUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    YOO, S
    SOU, IK
    DESOUZA, M
    FAURIE, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2623 - 2626
  • [2] THE DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    WIJEWARNASURIYA, PS
    SIVANANTHAN, S
    SOU, IK
    KIM, YJ
    MAHAVADI, KK
    FAURIE, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2830 - 2833
  • [3] INSITU SPECTROSCOPIC ELLIPSOMETRY DURING MOLECULAR-BEAM EPITAXY OF CADMIUM MERCURY TELLURIDE
    DEMAY, Y
    ARNOULT, D
    GAILLIARD, JP
    MEDINA, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3139 - 3142
  • [4] THE INTRINSIC AND EXTRINSIC DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    FAURIE, JP
    [J]. SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 351 - 359
  • [5] THE INTRINSIC AND EXTRINSIC DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    FAURIE, JP
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 351 - 359
  • [6] Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy
    Aoki, T
    Smith, DJ
    Chang, Y
    Zhao, J
    Badano, G
    Grein, C
    Sivananthan, S
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2275 - 2277
  • [7] Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy
    Selamet, Y
    Singh, R
    Zhao, J
    Zhou, YD
    Sivananthan, S
    Dhar, N
    [J]. MATERIALS FOR INFRARED DETECTORS III, 2003, 5209 : 67 - 74
  • [8] Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
    K. D. Mynbaev
    S. V. Zablotsky
    A. V. Shilyaev
    N. L. Bazhenov
    M. V. Yakushev
    D. V. Marin
    V. S. Varavin
    S. A. Dvoretsky
    [J]. Semiconductors, 2016, 50 : 208 - 211
  • [9] Defects in Mercury-Cadmium Telluride Heteroepitaxial Structures Grown by Molecular-Beam Epitaxy on Silicon Substrates
    Mynbaev, K. D.
    Zablotsky, S. V.
    Shilyaev, A. V.
    Bazhenov, N. L.
    Yakushev, M. V.
    Marin, D. V.
    Varavin, V. S.
    Dvoretsky, S. A.
    [J]. SEMICONDUCTORS, 2016, 50 (02) : 208 - 211
  • [10] HALL AND ELECTROREFLECTANCE STUDIES OF THE EFFECTS OF DOPING IN MERCURY-CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    RACCAH, PM
    GARLAND, JW
    ZHANG, Z
    CHU, AHM
    RENO, J
    SOU, IK
    BOUKERCHE, M
    FAURIE, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2077 - 2080
12345