EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES

被引：2

作者：

TSANG, JS ^{[1
]}

LEE, CP ^{[1
]}

FAN, JC ^{[1
]}

LEE, SH ^{[1
]}

TSAI, KL ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

LT-GAAS; COMPOSITIONAL DISORDERING; SUPERLATTICE; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.34.1089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of thickness and position of the low-temperature-grown GaAs (LT-GaAs) layer on the compositional disordering of AlGaAs/GaAs superlattice have been studied. Samples with a top LT-GaAs layer or a bottom LT-GaAs layer have been studied with various annealing conditions. It was found that the LT-GaAs layer grown on top of the superlattice is more effective in causing disordering than the LT-GaAs layer grown at the bottom. The amount of disordering increases with the thickness of the LT-GaAs layer. A selective disordering process has been developed using a patterned LT-GaAs cap layer. This disordering technique is very simple and can be easily applied to device fabrication.

引用

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页码：1089 / 1093

页数：5

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