LOW-TEMPERATURE DOPING OF SILICON BY RADIATION-INDUCED DIFFUSION

被引：2

作者：

KOIFMAN, AI ^{[1
]}

NARKULOV, AN ^{[1
]}

OKSENGENDLER, BL ^{[1
]}

YUNUSOV, MS ^{[1
]}

机构：

[1] TASHKENT NUCL PHYS INST,TASHKENT,UZSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 02期

关键词：

D O I：

10.1002/pssa.2210380203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：439 / 446

页数：8

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