LOW-TEMPERATURE DOPING OF SILICON BY RADIATION-INDUCED DIFFUSION

被引：2
|
作者：
KOIFMAN, AI [1 ]
NARKULOV, AN [1 ]
OKSENGENDLER, BL [1 ]
YUNUSOV, MS [1 ]
机构：
[1] TASHKENT NUCL PHYS INST,TASHKENT,UZSSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 02期
关键词：
D O I：
10.1002/pssa.2210380203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：439 / 446
页数：8
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